GaN Power Device Market 2019- Global Industry Details by Overview, Size, Top Manufacturers, Trends, Demand, Overview, Forecast to 2025

GaN Power Device Market By Device Type (RF Power and Power), Voltage Range (>600 Volt, 200–600 Volt and <200 Volt), Application (Radio Frequency, Supply & Inverter and Power Drivers) and Vertical (Medical, Telecommunications, Military, Defense, & Aerospace, Industrial, Automotive and Other Verticals) – Global Industry Analysis And Forecast To 2025         

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Industry Outlook

The Gallium nitride (GaN) is the material which may be utilized in the generation of the semiconductor power gadgets and also the light emitting diodes (LEDs) and the RF components. These materials exhibited the ability to be one of the displacement innovations for the silicon semiconductors in analog, RF, and power conversion applications. The advantages of these materials are; less losses of switching, lower losses of conductance, lower power requirement, lower cost and other advantages. Therefore, the GaN Power Device Market is anticipated to expand and has tremendous scope during the forecast period. The global GaN Power Device Market anticipated to flourish in the future by growing at a significantly higher CAGR.

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Market Segmentation

By Device Type the market is segmented into RF Power and Power. The RF Power section is leading the market owing to rising demand for high power devices in various bands of frequency, increasing number of applications related to satellite, electronic warfare, radar, & communications and other factors.

By Voltage Range the market is segmented into >600 Volt, 200–600 Volt and <200 Volt.

By Application the market is segmented into Radio Frequency, Supply & Inverter and Power Drivers.

By Vertical the market is segmented into Medical, Telecommunications, Military, Defense, & Aerospace, Industrial, Automotive and Other Verticals. The other vertical section is leading the market due to wide range of applications of these power devices in the consumer electronics.

Regional Insights

The Asia Pacific region is leading the global GaN Power Device Market owing to rising demand for the power devices in various sectors like computing, automotive, aerospace, telecommunications, & industrial, increasing production of the electric vehicle and other factors.

GaN Power Device Market, By Region

North America

  • U.S.
  • Canada
  • Mexico

Europe

  • Germany
  • UK
  • France
  • Russia
  • Italy
  • Rest of Europe

Asia-Pacific

  • China
  • Japan
  • South Korea
  • India
  • Southeast Asia
  • Rest of Asia-Pacific

South America

  • Brazil
  • Argentina
  • Columbia
  • Rest of South America

Middle East and Africa

  • Saudi Arabia
  • UAE
  • Egypt
  • Nigeria
  • South Africa
  • Rest of MEA

Competitive Analysis

The major players in the market are profiled in detail in view of qualities, for example, company portfolio, business strategies, financial overview, recent developments, and market share of the overall industry.

  • VisIC
  • Efficient Power Conversion Corporation (EPC)
  • Toshiba Corporation
  • Fujitsu Limited
  • Texas Instruments Inc.
  • GaN Systems
  • Infineon Technologies AG
  • Taiwan Semiconductor Manufacturing Company
  • On Semiconductors
  • Panasonic Corporation

Some of the key questions answered by the report are:          

  • What was the market size in 2014 and forecast from 2015 to 2025?
  • What will be the industry market growth from 2015 to 2025?
  • What are the major drivers, restraints, opportunities, challenges, and industry trends and their impact on the market forecast?
  • What are the major segments leading the market growth and why?
  • Which are the leading players in the market and what are the major strategies adopted by them to sustain the market competition?

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